Light-emitting component with silicon carbide as substrate

A light-emitting component using silicon carbide as substrate which mainly comprises, a silicon carbide substrate, whose upper surface is covered by a boron phosphide breaker, type I gallium nitride bonding layer covering boron phosphide breaker surface, a reactive layer covering the type I gallium nitride bonding layer surface and a type II gallium nitride bonding layer covering the reactive layer surface. The invention can reduce the process complexity and minimizing the drawbacks caused by mismatching crystal lattice. 一种以碳化硅为基板的发光元件，其主要是以3C-SiC做为一基板，并且利用磷化硼作为此基板与磊晶层之间的缓冲层，其主要包括有：一碳化硅基板；一磷化硼缓冲层覆盖于碳化硅基板的上表面；第一型氮化镓束缚层覆盖于磷化硼缓冲层表面；活性层覆盖于第一型氮化镓束缚层表面及第二型氮化镓束缚层覆盖于活性层表面。具有减少制程复杂度、减少晶格不匹配及避免产生缺陷的功效。