Procedure for producing isolation region with shallow groove possessing protection layer for rim angle

The manufacturing procedure includes pad insulation layer and mask layer are formed in sequence on semiconductor substrate; an opening is formed to expose the semiconductor substrate; etching the pad insulation layer on two sides in the opening for taking off the pad insulation layer adjacent to the opening; etching mask layer for taking off a mask layer with certain width and forming undercutting area on two sides of opening; forming protective layer located in the undercutting area and sidewalls of mask layer; etching semiconductor substrate to form grooves; forming isolation region with shallow groove located on grooves and opening; taking off mask layer and protective layer on sidewalls of mask layer; taking off pad insulation layer, and leaving protective layer at undercutting area as protective layer for rim angle in isolation region with shallow groove. 本发明公开了一种具有边角保护层的浅沟槽隔离区制造程序，包括下列步骤：在半导体基底上依序形成垫绝缘层和掩膜层；形成开口以露出半导体基底；蚀刻开口内两侧的垫绝缘层，去除邻接开口的部分垫绝缘层；蚀刻掩膜层，去除开口两侧一预定宽度的掩膜层并于开口两侧形成一底切区域；形成位于开口内的该底切区域内及掩膜层侧壁上的保护层；蚀刻半导体基底，于半导体基底中形成沟槽；形成位于沟槽及开口内的浅沟槽隔离区；去除掩膜层，并去除掩膜层侧壁上的保护层；以及去除该垫绝缘层并留下底切区域的保护层，作为浅沟槽隔离区的边角保护层。