Memory sense amplifier for semiconductor memory device
一半导体记忆装置(1)之内存感测放大器(10)被提供一补偿电流源装置(30)，其产生一补偿电流(Icomp)并将其输入一互相连接之位线(4)。该补偿电流(Icomp)以在读出期间实质上随时间而固定之一电位梯度可配合一补偿电压源装置(20)被产生及/或维持在被选择及互相连接之位线装置(4)上之方式被选择。 A memory sense amplifier for a semiconductor memory device is provided with a compensation current source device that generates a compensation curr...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | 一半导体记忆装置(1)之内存感测放大器(10)被提供一补偿电流源装置(30)，其产生一补偿电流(Icomp)并将其输入一互相连接之位线(4)。该补偿电流(Icomp)以在读出期间实质上随时间而固定之一电位梯度可配合一补偿电压源装置(20)被产生及/或维持在被选择及互相连接之位线装置(4)上之方式被选择。
A memory sense amplifier for a semiconductor memory device is provided with a compensation current source device that generates a compensation current and feeds it to an interconnected bit line. The compensation current is selected in such a manner that during readout a potential gradient can be generated and/or maintained in cooperation with a compensation voltage source device on the selected and interlinked bit line device that is substantially constant over time. |
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