Time-detection device and time-detection method by using semi-conductor element

一种时间记录装置使用浮动闸胞元，其中ON层结构或ONO层结构在浮动闸及控制闸间被提供。一种电荷注入单元被提供以藉由施用电压或电压脉冲于该控制闸电极而注入电荷于该浮动闸电极及注入ON结构或ONO结构的该氮化物层，注入该氮化物层的电荷浓度中心系位于该层序列的氧化物层及氮化物层间的接口。时间记录装置亦包括一种单元以在该氮化物层电荷浓度中心离开接口之偏移所引起在该信道区域的传送行为之变化为基准记录自电荷注入已经过时间。 A time recording device employs a floating gate cell, wherein an ON layer structure or an ONO layer structure is provided between floating gate and control gate. A charge injection unit is provided to inject charges into the floating gate electrode and into the nitride layer of the ON structure or the ONO structure by applying a voltage or voltage pulses to the control gate electrode, a center of concentration of the charges injected into the nitride layer being located at the interface between oxide layer and nitride layer of the layer sequence. The time recording device also includes a unit for recording a time which has elapsed since charge injection on the basis of changes in the transmission behavior of the channel region caused by a shift in the center of concentration of the charges in the nitride layer away from the interface.