Method for producing microelectronic component and component produced according to said method
提供一种微电子器件的制造方法，通过在GaAs化合物半导体材料上，特别是在例如异质结二极管的异质结结构GaAs化合物半导体材料上制成半导体件，它以简单且价廉的制造工艺获得具有长时间工作低欧姆接触电阻的特点。 The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipo...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | 提供一种微电子器件的制造方法，通过在GaAs化合物半导体材料上，特别是在例如异质结二极管的异质结结构GaAs化合物半导体材料上制成半导体件，它以简单且价廉的制造工艺获得具有长时间工作低欧姆接触电阻的特点。
The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-term stability of the component properties in a simple and cost-effective process profile. |
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