CMOS fabrication process utilizing special transistor orientation
互补金属氧化物半导体晶体管形成在硅基片上。基片具有{100}结晶取向。形成在基片上的晶体管的取向，是使电流在晶体管沟道内的流动方向平行于 方向。此外，在沟道上还施加纵向拉应力。 Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in...
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| Sprache: | chi ; eng |
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| Zusammenfassung: | 互补金属氧化物半导体晶体管形成在硅基片上。基片具有{100}结晶取向。形成在基片上的晶体管的取向，是使电流在晶体管沟道内的流动方向平行于 方向。此外，在沟道上还施加纵向拉应力。
Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the direction. Additionally, longitudinal tensile stress is applied to the channels. |
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