Method of measuring built crystal layer thickness

Method of measuring built crystal layer thickness

A method for measuring the thickness of an epitaxial layer on substrate includes such steps as generating a non-monocrystal layer on substrate, generating an epitaxial layer to be measured to become polycrystal on the non-monocrystal layer, measuring the thicknesses of polycrystal layer and non-crys...

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Hauptverfasser: HUAZHOU ZENG, DENGQI YANG, QINGFU LIN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HUAZHOU ZENG
DENGQI YANG
QINGFU LIN
description A method for measuring the thickness of an epitaxial layer on substrate includes such steps as generating a non-monocrystal layer on substrate, generating an epitaxial layer to be measured to become polycrystal on the non-monocrystal layer, measuring the thicknesses of polycrystal layer and non-crystal layer and the difference between their thickness sum and said epitaxial layer to be measured, and subtracting.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of measuring built crystal layer thickness
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