Memory structures

Memory structures

A memory structure that includes a first electrode (35, 135, 235, 335, 435, 535, 635, 743), a second electrode (39, 139, 239a, 239b, 339a, 339b, 439a, 439b, 539a, 539b, 639a, 639b, 735), a third electrode (43, 133, 233, 333, 341, 433, 441, 533, 633, 641, 739), a control element (25) disposed between...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KOLL ANDREW, LAZAROFF DENNIS M, FRICKE PETER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A memory structure that includes a first electrode (35, 135, 235, 335, 435, 535, 635, 743), a second electrode (39, 139, 239a, 239b, 339a, 339b, 439a, 439b, 539a, 539b, 639a, 639b, 735), a third electrode (43, 133, 233, 333, 341, 433, 441, 533, 633, 641, 739), a control element (25) disposed between the first electrode and the second electrode, and a memory storage element (23) disposed between the second electrode and the third electrode. At least one of the control element and memory storage element is protected from contamination by at least one of the first electrode, second electrode and third electrode.