Programmable element for programming utilizing resistance value change by phase change

Programmable element for programming utilizing resistance value change by phase change

A programmable element includes a resistive element having a polysilicon film and a metal silicide film or metal film stacked on the polysilicon film. The electric resistance of the resistive element is changed by changing the composition of the metal silicide film or metal film or the chemical bond...

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1. Verfasser: TAJIMA YOSHIAKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
STATIC STORES
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description A programmable element includes a resistive element having a polysilicon film and a metal silicide film or metal film stacked on the polysilicon film. The electric resistance of the resistive element is changed by changing the composition of the metal silicide film or metal film or the chemical bond state using heat, thereby programming on the basis of the change in the electric resistance of the resistor.
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subjects BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
STATIC STORES
title Programmable element for programming utilizing resistance value change by phase change
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