Programmable element for programming utilizing resistance value change by phase change

A programmable element includes a resistive element having a polysilicon film and a metal silicide film or metal film stacked on the polysilicon film. The electric resistance of the resistive element is changed by changing the composition of the metal silicide film or metal film or the chemical bond...

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Bibliographische Detailangaben
1. Verfasser:	TAJIMA YOSHIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS PULSE TECHNIQUE SEMICONDUCTOR DEVICES STATIC STORES
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Beschreibung
Zusammenfassung:	A programmable element includes a resistive element having a polysilicon film and a metal silicide film or metal film stacked on the polysilicon film. The electric resistance of the resistive element is changed by changing the composition of the metal silicide film or metal film or the chemical bond state using heat, thereby programming on the basis of the change in the electric resistance of the resistor.