Method for mfg. static random memory

A process for preparing static RAM includes defining a substrate, on which grid oxide layer and the first conductor layer have been formed, for generating embedded contact window, opening, generatingthe second conductor layer, generating an embedded contact window in the substrate relative to its opening, generating protecting layer, filling the recesses, removing part of protecting layer, generating patterned photoresist layer, etching to form a grid and internal connection, removing the photoresist layer, and implanting to form source/drain.