Magnetic storage device
A magnetic memory device includes a first resistance element formed in a memory cell unit, and at least one second resistance element and at least one third resistance element formed in a reference cell unit. The first, second, and third resistance elements store binary data by a resistance change....
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A magnetic memory device includes a first resistance element formed in a memory cell unit, and at least one second resistance element and at least one third resistance element formed in a reference cell unit. The first, second, and third resistance elements store binary data by a resistance change. The second resistance element stores one of the binary data. The third resistance element stores the other of the binary data. |
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