Joint cushion structure for later stage of copper/low dielectrical constant material making process
The joint cushion includes one dielectric layer and one conducting joint cushion layer formed through filling to protect the below part. The conducting joint cushion layer has several meso-layer pinsembedded into the dielectric layer to joint the below joint cushion structure. The joint cushion stru...
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| creator | KUNCHI WANG ZHENGYU HONG SONGXIONG WANG |
| description | The joint cushion includes one dielectric layer and one conducting joint cushion layer formed through filling to protect the below part. The conducting joint cushion layer has several meso-layer pinsembedded into the dielectric layer to joint the below joint cushion structure. The joint cushion structure includes also one protecting layer with one window to expose the conducting joint cushion, with the window possessing smooth contour. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1399334A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1399334A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1399334A3</originalsourceid><addsrcrecordid>eNqFzDEKAjEQheE0FqKewbmAiMRmS1kUsbCyX8I4WYfNZsIkwesbwd7qwcfPWxq8CccCWPOLJUIuWrFUJfCiEFwhbeZGAvGAkhLpPsgbnkyBsCijC81ja9rL_O25yewmjiMkFaSc12bhXci0-e3KbC_nR3_dUZKBcnJIkcrQ3w-266w9nuz_4gP8qj5a</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Joint cushion structure for later stage of copper/low dielectrical constant material making process</title><source>esp@cenet</source><creator>KUNCHI WANG ; ZHENGYU HONG ; SONGXIONG WANG</creator><creatorcontrib>KUNCHI WANG ; ZHENGYU HONG ; SONGXIONG WANG</creatorcontrib><description>The joint cushion includes one dielectric layer and one conducting joint cushion layer formed through filling to protect the below part. The conducting joint cushion layer has several meso-layer pinsembedded into the dielectric layer to joint the below joint cushion structure. The joint cushion structure includes also one protecting layer with one window to expose the conducting joint cushion, with the window possessing smooth contour.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030226&DB=EPODOC&CC=CN&NR=1399334A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030226&DB=EPODOC&CC=CN&NR=1399334A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUNCHI WANG</creatorcontrib><creatorcontrib>ZHENGYU HONG</creatorcontrib><creatorcontrib>SONGXIONG WANG</creatorcontrib><title>Joint cushion structure for later stage of copper/low dielectrical constant material making process</title><description>The joint cushion includes one dielectric layer and one conducting joint cushion layer formed through filling to protect the below part. The conducting joint cushion layer has several meso-layer pinsembedded into the dielectric layer to joint the below joint cushion structure. The joint cushion structure includes also one protecting layer with one window to expose the conducting joint cushion, with the window possessing smooth contour.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFzDEKAjEQheE0FqKewbmAiMRmS1kUsbCyX8I4WYfNZsIkwesbwd7qwcfPWxq8CccCWPOLJUIuWrFUJfCiEFwhbeZGAvGAkhLpPsgbnkyBsCijC81ja9rL_O25yewmjiMkFaSc12bhXci0-e3KbC_nR3_dUZKBcnJIkcrQ3w-266w9nuz_4gP8qj5a</recordid><startdate>20030226</startdate><enddate>20030226</enddate><creator>KUNCHI WANG</creator><creator>ZHENGYU HONG</creator><creator>SONGXIONG WANG</creator><scope>EVB</scope></search><sort><creationdate>20030226</creationdate><title>Joint cushion structure for later stage of copper/low dielectrical constant material making process</title><author>KUNCHI WANG ; ZHENGYU HONG ; SONGXIONG WANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1399334A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KUNCHI WANG</creatorcontrib><creatorcontrib>ZHENGYU HONG</creatorcontrib><creatorcontrib>SONGXIONG WANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUNCHI WANG</au><au>ZHENGYU HONG</au><au>SONGXIONG WANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Joint cushion structure for later stage of copper/low dielectrical constant material making process</title><date>2003-02-26</date><risdate>2003</risdate><abstract>The joint cushion includes one dielectric layer and one conducting joint cushion layer formed through filling to protect the below part. The conducting joint cushion layer has several meso-layer pinsembedded into the dielectric layer to joint the below joint cushion structure. The joint cushion structure includes also one protecting layer with one window to expose the conducting joint cushion, with the window possessing smooth contour.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Joint cushion structure for later stage of copper/low dielectrical constant material making process |
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