Joint cushion structure for later stage of copper/low dielectrical constant material making process

Joint cushion structure for later stage of copper/low dielectrical constant material making process

The joint cushion includes one dielectric layer and one conducting joint cushion layer formed through filling to protect the below part. The conducting joint cushion layer has several meso-layer pinsembedded into the dielectric layer to joint the below joint cushion structure. The joint cushion stru...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KUNCHI WANG, ZHENGYU HONG, SONGXIONG WANG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The joint cushion includes one dielectric layer and one conducting joint cushion layer formed through filling to protect the below part. The conducting joint cushion layer has several meso-layer pinsembedded into the dielectric layer to joint the below joint cushion structure. The joint cushion structure includes also one protecting layer with one window to expose the conducting joint cushion, with the window possessing smooth contour.