Magnetic field element having a biasing magnetic layer structure

A magnetic field element provided with a stack of a first magnetic layer structure (7), a second magnetic layer structure (11) having a substantially fixed direction of magnetization (M11), and a spacer layer structure (9) separating the first magnetic layer structure and the second magnetic layer s...

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Bibliographische Detailangaben
Hauptverfasser: K.-M.H. LESSEN, M.F. GILLIES, A.E.T. KUIPER
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A magnetic field element provided with a stack of a first magnetic layer structure (7), a second magnetic layer structure (11) having a substantially fixed direction of magnetization (M11), and a spacer layer structure (9) separating the first magnetic layer structure and the second magnetic layer structure from each other. The magnetic field element is further provided with a biasing means for applying a longitudinal bias field to the first magnetic layer structure, which biasing means includes a thin biasing magnetic layer structure (3) located opposite to the first magnetic layer structure. The biasing magnetic layer structure provides a magnetic coupling field component (M3) perpendicular to the direction of magnetization of the second magnetic layer structure and is separated from the first magnetic layer structure by a non-magnetic layer structure (5). The first magnetic layer structure is ferromagnetically coupled to the biasing magnet layer structure. The magnetic field element is suitable for very high density applications.