Monocrystalline silicon wafer crystal orientation calibrating method
The invention relates to a method to calibrate crystal orientation of mono-crystalline silicon wafer used in area of micro mechanism and microelectronics. The crystal orientation of wafer is clearly exposed by means of claborate reference patterns and following pre-etching process. The error calibra...
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| creator | LIANGSHENG QU CHENPING JIA |
| description | The invention relates to a method to calibrate crystal orientation of mono-crystalline silicon wafer used in area of micro mechanism and microelectronics. The crystal orientation of wafer is clearly exposed by means of claborate reference patterns and following pre-etching process. The error calibrating the crystal orientation of wafer is controlled within plus or minus 0.1 degree, by observing the etching results formed from different reference patterns. With the etching results being processed further by using digital image processing technique, the calibrating accuracy can be improved to plus or minus 0.05 degree or even higher. |
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The crystal orientation of wafer is clearly exposed by means of claborate reference patterns and following pre-etching process. The error calibrating the crystal orientation of wafer is controlled within plus or minus 0.1 degree, by observing the etching results formed from different reference patterns. 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The crystal orientation of wafer is clearly exposed by means of claborate reference patterns and following pre-etching process. The error calibrating the crystal orientation of wafer is controlled within plus or minus 0.1 degree, by observing the etching results formed from different reference patterns. With the etching results being processed further by using digital image processing technique, the calibrating accuracy can be improved to plus or minus 0.05 degree or even higher.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Monocrystalline silicon wafer crystal orientation calibrating method |
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