Monocrystalline silicon wafer crystal orientation calibrating method

Monocrystalline silicon wafer crystal orientation calibrating method

The invention relates to a method to calibrate crystal orientation of mono-crystalline silicon wafer used in area of micro mechanism and microelectronics. The crystal orientation of wafer is clearly exposed by means of claborate reference patterns and following pre-etching process. The error calibra...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIANGSHENG QU, CHENPING JIA
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention relates to a method to calibrate crystal orientation of mono-crystalline silicon wafer used in area of micro mechanism and microelectronics. The crystal orientation of wafer is clearly exposed by means of claborate reference patterns and following pre-etching process. The error calibrating the crystal orientation of wafer is controlled within plus or minus 0.1 degree, by observing the etching results formed from different reference patterns. With the etching results being processed further by using digital image processing technique, the calibrating accuracy can be improved to plus or minus 0.05 degree or even higher.