High purity tantalum and products containing the same like sputter targets

High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995%, and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which have a texture and which an (100) intensity within any 5...

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Bibliographische Detailangaben
Hauptverfasser:	CHRISTOPHER A. MICHALUK, JAMES D. MAGUIRE JR, MARK N. KAWCHAK
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS CASTING CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS POWDER METALLURGY PRETREATMENT OF RAW MATERIALS PRODUCTION AND REFINING OF METALS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995%, and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which have a texture and which an (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about -4.0 or combinations of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers and wire. Also disclosed is a process for making a sputtering target comprising tantalum metal.