Production method of semiconductor device
The method includes following step: a passivation layer is made on the metal layer; a dielectric layer is made on the passivation layer; an anti-reflecting layer is made on the dielectric layer; etching and self-alignment are made to produce a trench; a barrier layer is deposited on the anti-reflect...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The method includes following step: a passivation layer is made on the metal layer; a dielectric layer is made on the passivation layer; an anti-reflecting layer is made on the dielectric layer; etching and self-alignment are made to produce a trench; a barrier layer is deposited on the anti-reflected layer by using argon gas to sputter on the trench; then second barrier layer is deposited on the sputtered trench. |
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