Production method of semiconductor device

The method includes following step: a passivation layer is made on the metal layer; a dielectric layer is made on the passivation layer; an anti-reflecting layer is made on the dielectric layer; etching and self-alignment are made to produce a trench; a barrier layer is deposited on the anti-reflect...

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1. Verfasser: QINGTANG,ZHOU JIANG
Format: Patent
Sprache:eng
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Zusammenfassung:The method includes following step: a passivation layer is made on the metal layer; a dielectric layer is made on the passivation layer; an anti-reflecting layer is made on the dielectric layer; etching and self-alignment are made to produce a trench; a barrier layer is deposited on the anti-reflected layer by using argon gas to sputter on the trench; then second barrier layer is deposited on the sputtered trench.