Process system and process method

A first channel 30 is formed in the side of a first diffusion plate 21 which is on that side of a gas inlet tube 27 and a recess 32 is formed in the side which is on that side of an electrode plate 19. The first channel 30 and the recess 32 communicate with each other through a plurality of inlet po...

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Bibliographische Detailangaben
1. Verfasser:	KATO YOSHIHIRO,GOTO TADASHI,YOSHITAKA HIKARU,AOKIMAKOTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A first channel 30 is formed in the side of a first diffusion plate 21 which is on that side of a gas inlet tube 27 and a recess 32 is formed in the side which is on that side of an electrode plate 19. The first channel 30 and the recess 32 communicate with each other through a plurality of inlet ports 31. The first channel 30 and the inlet ports 31 form a gas flow passage L which leads to the recess 32 from the gas inlet tube 27. As a process gas supplied from the gas inlet tube 27 passes through the gas flow passage L, it is supplied, dispersed, to a hollow portion formed between the recess 32 and the electrode plate 19.