Apparatus and method for heat treating semiconductor

A supply system in a heat-treating apparatus for a semiconductor process has a combustor (12), heating unit (13), and gas distributor (14). The combustor (12) has a combustion chamber (59) disposed outside a process chamber (21). The combustor (12) generates water vapor by reaction of hydrogen gas a...

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Bibliographische Detailangaben
1. Verfasser:	ISHII KATSUTOSHI,TAKAHASHI YUTAKA,HASEGAWA HARUNARI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A supply system in a heat-treating apparatus for a semiconductor process has a combustor (12), heating unit (13), and gas distributor (14). The combustor (12) has a combustion chamber (59) disposed outside a process chamber (21). The combustor (12) generates water vapor by reaction of hydrogen gas and oxygen gas in the combustion chamber (59), and supplies it to the process chamber (21). The heating unit (13) has a heating chamber (61) disposed outside the process chamber (21). The heating unit (13) selectively heats a gas not passing through the combustion chamber (59) to a temperature not lower than an activating temperature of the gas, and supplies it to the process chamber (21). The gas distributor (14) selectively supplies the hydrogen gas and oxygen gas to the combustion chamber (59), and selectively supplies a reactive gas and inactive gas to the heating chamber (61).