Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions

Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions

A technique in which a first boundary region is added to the ends of phase zero (0) pattern defining polygons and a second boundary region is added to the ends of phase 180 pattern. This technique can improve line end pattern definition and improve the manufacturability and patterning process window...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: LUKANC TODD P.,SPENCE CHRISTOPHER A
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Beschreibung
Zusammenfassung:A technique in which a first boundary region is added to the ends of phase zero (0) pattern defining polygons and a second boundary region is added to the ends of phase 180 pattern. This technique can improve line end pattern definition and improve the manufacturability and patterning process window. The added boundary region balances the light on both sides of the line ends, resulting in a more predictable final resist pattern.