Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases

Methods of using reactive gases containing a perfluoroketone having 4 to 7 carbon atoms for removing unwanted deposits that build up in a vapor reactor, for etching dielectric and metallic materials in a vapor reactor, and for doping a material in a vapor reactor are described. The perfluoroketones...

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1. Verfasser: KESARI SUSRUT,FLYNN RICHARD M.,OWENS JOHN G.,VITCAK DANIEL R.,BEHR FREDERICK E.,COSTELLO MICHAEL G.,MINDAY RICHARD M
Format: Patent
Sprache:eng
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Zusammenfassung:Methods of using reactive gases containing a perfluoroketone having 4 to 7 carbon atoms for removing unwanted deposits that build up in a vapor reactor, for etching dielectric and metallic materials in a vapor reactor, and for doping a material in a vapor reactor are described. The perfluoroketones perform as well as or better than the standard perfluorocarbons used in the semiconductor industry but have minimal impact on global warming.