Photolithographic critical dimension control using reticle measurements

A method of implementing a new reticle for manufacturing semiconductors on a wafer which involves performing measurements on the reticle and assigning an initial exposure dose by using a predetermined algorithm. The exposure control system utilizes reticle CD data for automatically calculating retic...

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Bibliographische Detailangaben
1. Verfasser:	RANKIN JED H.,SCHNEIDER CRAIN E.,SMYTH JOHN S.,WATTS ANDREW J
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS AUXILIARY PROCESSES IN PHOTOGRAPHY BASIC ELECTRIC ELEMENTS CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR MEASURING MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS SEMICONDUCTOR DEVICES TARIFF METERING APPARATUS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TESTING
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Beschreibung
Zusammenfassung:	A method of implementing a new reticle for manufacturing semiconductors on a wafer which involves performing measurements on the reticle and assigning an initial exposure dose by using a predetermined algorithm. The exposure control system utilizes reticle CD data for automatically calculating reticle exposure offset values, i.e. reticle factors. A correlation of reticle size deviations to calculated reticle factors is used to derive a reticle factor for the new reticle. The derived reticle factor is then used to predict an initial exposure condition for the new reticle which is applied to the lithography tool for achieving a wafer design dimension.