Method for forming thin-film layer for device and organic electroluminescence device

The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k+/-0.5 wherein k is a constant from 2 to 5, when relation...

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Bibliographische Detailangaben
1. Verfasser: TOKAILIN HIROSHI,NAGASAKI YOSHIKAZU
Format: Patent
Sprache:eng
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Zusammenfassung:The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k+/-0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1): Di/D0i PROPORTIONAL (L0/Li) cos i wherein L0 is a distance from an evaporation source to a plane of the substrate in a perpendicular direction, D0i is a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Di is a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Li in a direction of an angle i against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.