Electron-beam cell projection aperture formation method

The present invention provides an electron-beam cell projection aperture formation method comprising: a step of applying a converged ion beam to a top surface of a substrate so as to be etched to a depth enabling to obtain a sufficient film thickness for absorbing or scattering an electron-beam ther...

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Bibliographische Detailangaben
1. Verfasser:	YAMASHITA KO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides an electron-beam cell projection aperture formation method comprising: a step of applying a converged ion beam to a top surface of a substrate so as to be etched to a depth enabling to obtain a sufficient film thickness for absorbing or scattering an electron-beam thereby to form an opening of a desired pattern on the top surface; and a step of uniformly applying the converged ion beam to a back surface of the substrate, excluding a hem portion thereof, so as to be etched to a depth reaching the opening.