Semiconductor shield compositions

A conducting polymer composite including:(i) a phase I material consisting essentially of a polar copolymer of ethylene and an unsaturated ester having 4 to 20 carbon atoms, said copolymer having a crystallinity of 0 to about 30 percent as determined by differential scanning calorimetry analysis and having a melt viscosity etaI;(ii) a phase II material having a crystallinity of 0 to about 30 percent as determined by differential scanning calorimetry analysis and having a melt viscosity etaII, said phase II material consisting essentially of (A) a non-polar copolymer of ethylene, an alpha-olefin having 3 to 12 carbon atoms, and, optionally, a diene, or (B) a non-polar elastomer, either of which, when mixed with the phase I material, will not enter into a completely homogeneous state, but is compatible with the phase I material; and(iii) a conducting filler material dispersed in the phase I material and/or the phase II in an amount sufficient to be equal to or greater than the amount required to generate a continuous conducting network in the phase I and phase II materials,with the proviso that the phase I and phase II materials, in the molten state, have the following relationship: (etaI÷etaII)x(VII÷VI)=about 0.5 to about 2.0, wherein VI and VII are the volume fractions of the phase I and phase II materials, respectively, and VI+VII=1.