Electron beam exposure method and system therefor

A method of leading an electron beam (22) radiated from an electron emitter (14) through openings provided in a stencil mask (18) to a sensitive sample (12) and exposing it includes placing the electron beam under a low field intensity where the electron beam progresses at a slow speed until reachin...

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Bibliographische Detailangaben
1. Verfasser:	HISATSUGU TOKUSHIGE
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of leading an electron beam (22) radiated from an electron emitter (14) through openings provided in a stencil mask (18) to a sensitive sample (12) and exposing it includes placing the electron beam under a low field intensity where the electron beam progresses at a slow speed until reaching the openings of the stencil mask and thereafter placing the electron beam having passed through the openings of the stencil mask under a high field intensity where the electron beam progresses at a high speed. An apparatus for electron beam projection lithography comprises an electron emitter, a stencil mask having openings for permitting the electron beam radiated from the electron emitter to pass through, a base (16) for supporting an exposure sample, and a device for placing the electron beam under a low field intensity as well as a high field generator for placing the electron beam under a high field intensity.