Method for producing microelectronic component and component produced according to said method

The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-te...

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Hauptverfasser: WOLFGANG DOSER, HERV BLANCK, KLAUS J. RIEPE
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creator WOLFGANG DOSER
HERV BLANCK
KLAUS J. RIEPE
description The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-term stability of the component properties in a simple and cost-effective process profile.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for producing microelectronic component and component produced according to said method
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