Method for producing microelectronic component and component produced according to said method
The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-te...
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creator | WOLFGANG DOSER HERV BLANCK KLAUS J. RIEPE |
description | The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-term stability of the component properties in a simple and cost-effective process profile. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1222984CC</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1222984CC</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1222984CC3</originalsourceid><addsrcrecordid>eNqNjDsOAjEMBdNQIOAOvgDFBgqoIxDNUlGzimwvRNrYkRPuj_gUlFRPI828ubv23O5KMKpBMaUHJrlBTmjKE2MzlYSAmosKS4Mo9EOfggkiohq90qZQYyLI79-lm41xqrz67sLB8XAJpzUXHbiWiCzchnDuvPf73TaEzR_KEynvPPg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for producing microelectronic component and component produced according to said method</title><source>esp@cenet</source><creator>WOLFGANG DOSER ; HERV BLANCK ; KLAUS J. RIEPE</creator><creatorcontrib>WOLFGANG DOSER ; HERV BLANCK ; KLAUS J. RIEPE</creatorcontrib><description>The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-term stability of the component properties in a simple and cost-effective process profile.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051012&DB=EPODOC&CC=CN&NR=1222984C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051012&DB=EPODOC&CC=CN&NR=1222984C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WOLFGANG DOSER</creatorcontrib><creatorcontrib>HERV BLANCK</creatorcontrib><creatorcontrib>KLAUS J. RIEPE</creatorcontrib><title>Method for producing microelectronic component and component produced according to said method</title><description>The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-term stability of the component properties in a simple and cost-effective process profile.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDsOAjEMBdNQIOAOvgDFBgqoIxDNUlGzimwvRNrYkRPuj_gUlFRPI828ubv23O5KMKpBMaUHJrlBTmjKE2MzlYSAmosKS4Mo9EOfggkiohq90qZQYyLI79-lm41xqrz67sLB8XAJpzUXHbiWiCzchnDuvPf73TaEzR_KEynvPPg</recordid><startdate>20051012</startdate><enddate>20051012</enddate><creator>WOLFGANG DOSER</creator><creator>HERV BLANCK</creator><creator>KLAUS J. RIEPE</creator><scope>EVB</scope></search><sort><creationdate>20051012</creationdate><title>Method for producing microelectronic component and component produced according to said method</title><author>WOLFGANG DOSER ; HERV BLANCK ; KLAUS J. RIEPE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1222984CC3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WOLFGANG DOSER</creatorcontrib><creatorcontrib>HERV BLANCK</creatorcontrib><creatorcontrib>KLAUS J. RIEPE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WOLFGANG DOSER</au><au>HERV BLANCK</au><au>KLAUS J. RIEPE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for producing microelectronic component and component produced according to said method</title><date>2005-10-12</date><risdate>2005</risdate><abstract>The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-term stability of the component properties in a simple and cost-effective process profile.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Method for producing microelectronic component and component produced according to said method |
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