Method for producing microelectronic component and component produced according to said method
The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-te...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-term stability of the component properties in a simple and cost-effective process profile. |
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