Method for forming dynamic random access storage

A method for forming DRAM includes such steps as making a transfer transistor on substrate, which is composed of a grid over the grid oxidized layer on substrate and the first and the second source/drain regions at both sides of channel region under grid, exposing out the first and the second source...

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Hauptverfasser:	SHIWEI SUN, CUIRONG YOU
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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