Method for forming dynamic random access storage

A method for forming DRAM includes such steps as making a transfer transistor on substrate, which is composed of a grid over the grid oxidized layer on substrate and the first and the second source/drain regions at both sides of channel region under grid, exposing out the first and the second sourcel drain regions, depositing a layer of silicon nitride, depositing a thick layer of silicon oxide, flatening the silicon oxide layer, making an opening over the first source/drain region, forming a capacitor electrode at the connecting point over the first source/drain region, and forming the connecting point for a bit line. It has high practical value.