Semiconductor device

A re-wiring layer is provided on a circuit-formed surface of an IC chip, in an area other than where external lead electrodes. In the process for forming a circuit of the IC chip, the re-wiring layer is formed in a step following to a circuit forming step, and the rewiring layer formation is executed as a part of the IC chip fabrication process. The re-wiring layer is provided with first electrode pads on a chip periphery, second electrode pads at positions closer to the IC chip than the positions of the first electrode pads, and wires or traces for connecting the first electrode pads with the second electrode pads according to the 1:1 correspondence therebetween. By so doing, it is possible to provide a semiconductor device that allows the number of possible combinations of sizes of the laminated semiconductor chips to increase, while ensuring that an increase in the package cost, an increase in the thickness of the package, and deterioration of the package production efficiency can be suppressed.