Semiconductor device, preparation method and electronic equipment

The invention relates to a semiconductor device, a preparation method and electronic equipment. The semiconductor device comprises a substrate, a control gate embedded in the substrate, a common gate dielectric layer and a side wall doping layer, the common gate dielectric layer and the side wall doping layer are located in the substrate under the control gate, and a floating gate conducting layer and a source gate conducting layer which are insulated from each other are wrapped in the common gate dielectric layer. The floating gate conductive layer is not connected with a potential, so that an electric field at the bottom of the control gate can be shared, the breakdown voltage of the device is increased, the situation that the electric field is concentrated at the bottom of the control gate and consequently breakdown is caused in advance is avoided, and when the device is in an on state, the side wall doping layer can form an electronic channel, so that on-resistance can be reduced; the effect of reducing t