Memory array, memory circuit and method of manufacturing memory device

A memory array includes a continuous active region extending along a direction. The memory array includes a first bit cell including a pair of a first programming device and a first reading device defined on a contiguous active region. The memory array includes a first program word line coupled to a gate of a first program device. The memory array includes a first read word line coupled to a gate of a pair of first read devices. The memory array includes a bit line, with a first one of the pair of first read devices coupled between a first source/drain node of the first programming device and the bit line. The embodiment of the invention also discloses a memory circuit and a method for manufacturing the memory device. 一种存储器阵列，包括沿着一方向延伸的连续有源区。存储器阵列包括第一位单元，第一位单元包括限定在连续有源区上的第一编程器件和第一读取器件的对。存储器阵列包括耦接到第一编程器件的栅极的第一编程字线。存储器阵列包括耦接到第一读取器件的对的栅极的第一读取字线。存储器阵列包括位线，其中，第一读取器件的对中的第一个耦接在第一编程器件的第一源极/漏极节点与位线之间。本申请的实施例还公开了一种存储器电路及制造存储器器件的方法。