Semiconductor processing technology method and semiconductor device

The invention discloses a semiconductor processing technology method and a semiconductor device. The semiconductor processing technology method comprises the following steps: forming an intermediate structure comprising a substrate, a metal structure and a patterned mask layer; the intermediate structure is placed in an etching chamber of an etching machine table, an etching process is carried out on the metal structure in the etching chamber by using an etching substance, the patterned mask layer is used as an etching mask in the etching process, a part of the metal structure is removed, and a metal pattern is formed; after the etching process, etching by-products generated by reaction of the etching substance and the removed part of the metal structure are left on the surface of the intermediate structure; the intermediate structure is moved to an additional vacuum chamber of the etching machine table from an etching chamber of the etching machine table, water vapor is introduced into the additional vacuum