Preparation method of tellurium-cadmium-mercury detector metal electrode and tellurium-cadmium-mercury detector

The invention relates to a preparation method of a mercury-cadmium-telluride detector metal electrode and a mercury-cadmium-telluride detector. The preparation method comprises the following steps: S1, providing a mercury-cadmium-telluride pn junction array; s2, growing a first layer of passivation...

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Bibliographische Detailangaben
Hauptverfasser: YANG CHAOCHEN, HUANG LI, WANG XIN, WANG XINGCHEN, HUANG SHENG, LIU YONGFENG, LIU QI, HE YUKUAN, CUI QINYIN, ZHANG BINGJIE
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to a preparation method of a mercury-cadmium-telluride detector metal electrode and a mercury-cadmium-telluride detector. The preparation method comprises the following steps: S1, providing a mercury-cadmium-telluride pn junction array; s2, growing a first layer of passivation film on the tellurium-cadmium-mercury pn junction array; s3, forming a first-layer metal electrode hole in the first-layer passivation film, growing a first-layer metal electrode, and enabling the first-layer metal electrode to be electrically conducted with the tellurium-cadmium-mercury pn junction array; s4, growing a second layer of passivation film on the first layer of passivation film, wherein the second layer of passivation film covers the first layer of passivation film and the first layer of metal electrode; and S5, forming a second-layer metal electrode hole in the second-layer passivation film, growing a second-layer metal electrode, and electrically conducting the second-layer metal electrode hole and t