Dicing device, method for manufacturing semiconductor chip, and semiconductor chip

The dicing device (1) is provided with: a laser irradiation unit (13a) that forms a modified layer (Wm) in a wafer (W1) by irradiating a laser light (L) in a Df direction extending along each of a plurality of dicing lanes (Ws) of the wafer (W1); a first imaging unit (14a) capable of imaging the wafer (W1) on which the modified layer (Wm) has been formed; and a common attachment member (13b) to which both the laser irradiation unit (13a) and the first imaging unit (14a) are attached. 该切割装置（1）具备：激光照射部（13a），通过在沿着晶片（W1）的多个切割道（Ws）的各自延伸的Df方向上照射激光（L）而在晶片（W1）内形成改质层（Wm）；第一拍摄部（14a），能够拍摄形成改质层（Wm）后的晶片（W1）；及共用的安装构件（13b），安装有激光照射部（13a）及第一拍摄部（14a）的双方。