Magnetic anisotropic film and preparation method thereof
The invention provides a magnetic anisotropic film and a preparation method thereof. According to the magnetic anisotropy thin film, the Zr layer is inserted into the MgO layer between the CoFeB layers, or the Zr layer is inserted between the MgO layer and the protective layer, meanwhile, the thickn...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a magnetic anisotropic film and a preparation method thereof. According to the magnetic anisotropy thin film, the Zr layer is inserted into the MgO layer between the CoFeB layers, or the Zr layer is inserted between the MgO layer and the protective layer, meanwhile, the thickness of the Zr layer is smaller than or equal to 1 nm, Zr atoms are selected as objects reacting with MgO, oxygen regulation and control are conducted on the thin film by changing the thickness of the Zr layer, and therefore the magnetic anisotropy of the thin film is changed; according to the preparation method of the magnetic anisotropy thin film, gas except argon does not need to be introduced in the preparation process, high-temperature and high-vacuum annealing treatment does not need to be conducted, the magnetic anisotropy of the thin film can be regulated and controlled only by changing the thickness of the Zr layer, regulating and controlling the oxygen content of MgO and further influencing the magnetic an |
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