Manufacturing method of surface acoustic wave filter with high Q value

Manufacturing method of surface acoustic wave filter with high Q value

The embodiment of the invention discloses a manufacturing method of a surface acoustic wave filter with a high Q value, and the method comprises the steps: taking silicon as a substrate, depositing silicon dioxide on the surface of the substrate as a temperature compensation layer and a low sound ve...

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Hauptverfasser: JIANG YANGANG, CHEN XIAOBING, LIU SHAOKAN, LI QIANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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creator JIANG YANGANG
CHEN XIAOBING
LIU SHAOKAN
LI QIANG
description The embodiment of the invention discloses a manufacturing method of a surface acoustic wave filter with a high Q value, and the method comprises the steps: taking silicon as a substrate, depositing silicon dioxide on the surface of the substrate as a temperature compensation layer and a low sound velocity layer, and finally bonding a piezoelectric single crystal film on the silicon dioxide through a wafer bonding technology. Meanwhile, in order to reduce the influence of color difference in the wafer on the frequency of the device, a layer of anti-reflection film is sprayed before the gluing process, and exposure is carried out by adopting a partition exposure method. The surface acoustic wave filter manufactured by the embodiment of the invention is small in loss, high in out-of-band rejection, excellent in temperature stability and good in power resistance, can effectively improve the signal transmission quality of communication equipment, and has excellent anti-burning capability. 本发明实施例公开了一种高Q值的声表面滤波器的制作方
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Meanwhile, in order to reduce the influence of color difference in the wafer on the frequency of the device, a layer of anti-reflection film is sprayed before the gluing process, and exposure is carried out by adopting a partition exposure method. The surface acoustic wave filter manufactured by the embodiment of the invention is small in loss, high in out-of-band rejection, excellent in temperature stability and good in power resistance, can effectively improve the signal transmission quality of communication equipment, and has excellent anti-burning capability. 本发明实施例公开了一种高Q值的声表面滤波器的制作方</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDzTcwrTUtMLiktysxLV8hNLcnIT1HIT1MoLi0CCqcqJCbnlxaXZCYrlCeWpSqkZeaUpBYplGeWZChkZKZnKAQqlCXmlKbyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4gKgSXmpJfHOfoaGFhZmFhbGZo7GxKgBACt5M4A</recordid><startdate>20241029</startdate><enddate>20241029</enddate><creator>JIANG YANGANG</creator><creator>CHEN XIAOBING</creator><creator>LIU SHAOKAN</creator><creator>LI QIANG</creator><scope>EVB</scope></search><sort><creationdate>20241029</creationdate><title>Manufacturing method of surface acoustic wave filter with high Q value</title><author>JIANG YANGANG ; CHEN XIAOBING ; LIU SHAOKAN ; LI QIANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118868836A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>JIANG YANGANG</creatorcontrib><creatorcontrib>CHEN XIAOBING</creatorcontrib><creatorcontrib>LIU SHAOKAN</creatorcontrib><creatorcontrib>LI QIANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIANG YANGANG</au><au>CHEN XIAOBING</au><au>LIU SHAOKAN</au><au>LI QIANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacturing method of surface acoustic wave filter with high Q value</title><date>2024-10-29</date><risdate>2024</risdate><abstract>The embodiment of the invention discloses a manufacturing method of a surface acoustic wave filter with a high Q value, and the method comprises the steps: taking silicon as a substrate, depositing silicon dioxide on the surface of the substrate as a temperature compensation layer and a low sound velocity layer, and finally bonding a piezoelectric single crystal film on the silicon dioxide through a wafer bonding technology. 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subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
title Manufacturing method of surface acoustic wave filter with high Q value
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