Manufacturing method of surface acoustic wave filter with high Q value

The embodiment of the invention discloses a manufacturing method of a surface acoustic wave filter with a high Q value, and the method comprises the steps: taking silicon as a substrate, depositing silicon dioxide on the surface of the substrate as a temperature compensation layer and a low sound velocity layer, and finally bonding a piezoelectric single crystal film on the silicon dioxide through a wafer bonding technology. Meanwhile, in order to reduce the influence of color difference in the wafer on the frequency of the device, a layer of anti-reflection film is sprayed before the gluing process, and exposure is carried out by adopting a partition exposure method. The surface acoustic wave filter manufactured by the embodiment of the invention is small in loss, high in out-of-band rejection, excellent in temperature stability and good in power resistance, can effectively improve the signal transmission quality of communication equipment, and has excellent anti-burning capability. 本发明实施例公开了一种高Q值的声表面滤波器的制作方