Method for measuring photoresist fading amount and optical proximity correction method

The invention provides a light resistance fading amount measuring method and an optical proximity correction method, and the measuring method comprises the steps: providing a light resistance layer, defining a target light resistance pattern on the light resistance layer, and setting an anchoring po...

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Bibliographische Detailangaben
Hauptverfasser: ZENG DINGCHENG, HU ZHANYUAN, FAN FUJIE, LIN YIXU, CHEN YONGXIANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides a light resistance fading amount measuring method and an optical proximity correction method, and the measuring method comprises the steps: providing a light resistance layer, defining a target light resistance pattern on the light resistance layer, and setting an anchoring point on the target light resistance pattern; performing exposure and development on the photoresist layer according to the defined target photoresist pattern to form an actual photoresist pattern with an anchor point; determining a target edge of the target photoresist pattern based on the anchor point position of the actual photoresist pattern; obtaining an actual edge of the actual photoresist pattern through measurement; and based on the distance between the actual edge and the target edge, obtaining the photoresist fading amount of the actual photoresist pattern. According to the invention, the accurate target edge of the photoresist pattern can be obtained based on the anchor point, and after the actual edge of