Cerium oxide-based slurry composition for selective and non-selective CMP of silicon oxide, silicon nitride and polysilicon

The present invention provides a chemical mechanical polishing composition comprising: (a) cerium oxide abrasive particles; (b) a cationic polymer; (c) a buffer solution; and (d) water, wherein the polishing composition has a pH of from about 6 to about 9. The invention also provides a method of che...

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Bibliographische Detailangaben
Hauptverfasser: CHANG JU-YEON, REISS BRIAN, HUANG HELIN, KIM SUNG WOO
Format: Patent
Sprache:chi ; eng
Schlagworte:
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