Cerium oxide-based slurry composition for selective and non-selective CMP of silicon oxide, silicon nitride and polysilicon

The present invention provides a chemical mechanical polishing composition comprising: (a) cerium oxide abrasive particles; (b) a cationic polymer; (c) a buffer solution; and (d) water, wherein the polishing composition has a pH of from about 6 to about 9. The invention also provides a method of chemically mechanical polishing a substrate, in particular a substrate comprising silicon oxide, silicon nitride and polysilicon, using the polishing composition of the invention. 本发明提供一种化学机械抛光组合物，其包含：(a)氧化铈磨粒；(b)阳离子性聚合物；(c)缓冲液；和(d)水，其中所述抛光组合物具有约6至约9的pH值。本发明还提供一种使用本发明的抛光组合物化学机械抛光衬底、尤其包含硅氧化物、硅氮化物和多晶硅的衬底的方法。