Organic quantum dot light-emitting structure and production process thereof

The invention relates to the technical field of semiconductors, in particular to an organic quantum dot light-emitting structure and a production process thereof.The organic quantum dot light-emitting structure comprises an n-type ohmic electrode, an electron injection layer, an electron transport l...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIU XIANGLIN, CUI CAOXIANG, LI CHENGMING, GUO BAIJUN, ZHU RUIPING, YANG SHAOYAN, SHI CHAO, CHEN ZHAOXIAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to the technical field of semiconductors, in particular to an organic quantum dot light-emitting structure and a production process thereof.The organic quantum dot light-emitting structure comprises an n-type ohmic electrode, an electron injection layer, an electron transport layer, a plurality of organic quantum dots, an infiltration layer, a hole transport layer, a hole injection layer and a P-type electrode; the electron injection layer can improve the injection efficiency of electrons excited by the n-type ohmic electrode to the electron transport layer. The electron transport layer facilitates transmission of electrons from the n-type ohmic electrode to the layer where the organic quantum dots are located. The hole injection layer can improve the efficiency of injecting holes excited by the P-type electrode into the hole injection layer. The hole transport layer is beneficial to transmission of holes from the P-type electrode to the layer where the organic quantum dots are located.