Spin orbit torque material, magnetic memory device including same, and method of manufacturing spin orbit torque material

A spin-orbital moment (SOT) material, a method of manufacturing the SOT material, and a magnetic memory device including the SOT material are provided, the spin-orbital moment (SOT) material may include a substrate and an epitaxial thin film including a plurality of sub-stacks on the substrate, wherein a crystal structure of a first sub-stack among the plurality of sub-stacks in a lower portion of the epitaxial thin film is an orthorhombic system, and a crystal structure of a second sub-stack among the plurality of sub-stacks in an upper portion of the epitaxial thin film is a tetragonal system, and a lower portion of the epitaxial thin film is closer to the substrate than an upper portion of the epitaxial thin film. 提供可自旋轨道矩(SOT)材料、SOT材料的制造方法、以及包括SOT材料的磁性存储器器件，所述自旋轨道矩(SOT)材料可包括衬底和在所述衬底上的包括多个子叠层的外延薄膜，其中在所述外延薄膜的下部部分中的所述多个子叠层之中的第一子叠层的晶体结构为正交晶系，并且在所述外延薄膜的上部部分中的所述多个子叠层之中的第二子叠层的晶体结构为四方晶系，并且所述外延薄膜的下部部分比所述外延薄膜的上部部分更靠近所述衬底。