MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

The invention relates to a memory device and a manufacturing method thereof. A memory device includes: first and second material layers alternately stacked; a vertical hole passing through the first material layer and the second material layer; a first insulating pattern protruding from a side surfa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YEON KI-GAP, KIM SUNG-SOON, GWON TAE HONG, JEON SEOK-MIN, JEON SEONG MAN, LEE MIN-HO, KIM JI-SUNG, LEE SANG-SEOB
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!