MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

The invention relates to a memory device and a manufacturing method thereof. A memory device includes: first and second material layers alternately stacked; a vertical hole passing through the first material layer and the second material layer; a first insulating pattern protruding from a side surface of the first material layer exposed through the vertical hole; a barrier layer formed along a surface of the second material layer exposed between the first insulating patterns, the barrier layer including a plurality of recesses, each recess between the first insulating patterns; and charge trapping patterns formed in the recesses, in which portions of the barrier layer are exposed between the charge trapping patterns, and in which the tunnel insulating layer, the channel layer, and the stem are formed in a region substantially surrounded by the charge trapping patterns. 本申请涉及存储器装置及其制造方法。一种存储器装置包括：交替地层叠的第一材料层和第二材料层；穿过第一材料层和第二材料层的垂直孔；从第一材料层的通过垂直孔暴露的侧表面突出的第一绝缘图案；沿着第一绝缘图案之间暴露的第二材料层的表面形成的阻挡层，该阻挡层包括多个凹部，各个凹部在第一绝缘图案之