High-strength bubble-free bonding method for silicon carbide seed crystals

The invention provides a high-strength bubble-free bonding method of a silicon carbide seed crystal, which comprises the following steps: step 1, etching a plurality of crisscrossed etching grooves on the bonding surface of the seed crystal, the etching grooves being through grooves; and step 2, carrying out seed crystal bonding on the bonding surface of the seed crystal. According to the method, the continuous etching grooves are formed through an etching method, so that the bubbles are led out through the etching grooves while firm bonding is guaranteed, and the probability that the bubbles appear in the bonding process is reduced. 本发明提供了一种碳化硅籽晶的高强度无气泡粘接方法，包括如下步骤：步骤一、在籽晶的粘结面刻蚀出若干纵横交错的刻蚀槽，所述刻蚀槽为通槽；步骤二、在籽晶的粘结面进行籽晶粘接。本发明通过刻蚀的方法形成连续的刻蚀槽，从而在保证粘结牢固的同时，通过刻蚀槽将气泡导出，降低粘结过程中出现气泡的几率。