Manufacturing method of interconnection structure

The invention discloses a manufacturing method of an interconnection structure, and the method comprises the steps: providing a substrate which is provided with a first dielectric layer, and the first dielectric layer is provided with a first conductor; forming a second dielectric layer on the first dielectric layer; forming a trench in the second dielectric layer to expose a top surface of the first conductor; and performing an annealing process on the top surface of the first conductor under the conditions of an annealing temperature of 400-450 DEG C for less than 5 minutes, and a gaseous environment comprising hydrogen and nitrogen. 本发明公开一种互连结构的制作方法，包括：提供衬底，所述衬底上具有第一介电层，所述第一介电层中具有第一导体；在所述第一介电层上形成第二介电层；在所述第二介电层中形成沟槽以暴露所述第一导体的顶面；以及对所述第一导体的顶面进行退火工艺，其条件包括400～450℃的退火温度，持续时间少于5分钟，以及包含氢气和氮气的气体环境。